Login 丨 Register 丨 Home 丨 Chinese
Achivement Detail
Preparationoflarge-size,low-cost,high-qualitysiliconcarbidesubstrates

0

Registration number：G20250759

Industry：

Subject classification：

Key words： Semiconductor Silicon Carbide Reduce Losses

Green classification：

Publisher：管理人员

Release time：2025-08-09 08:59:41.0

  • Essential information
Name of achievement： Preparationoflarge-size,low-cost,high-qualitysiliconcarbidesubstrates
Result registration number： G20250759 Subject classification：
Green classification： Item keywords： Semiconductor   Silicon Carbide   Reduce Losses    
Recommenders：

Tongji University

 The stage of achievement：
Mode of cooperation： Outcome Information：
Countries/regions： China Intellectual property rights：
Introduction： Click to view
Compared to silicon-based power semiconductors, silicon carbide (SiC)-based power semiconductors significantly reduce losses and device area, playing an important role in industries such as electric power, railways, hybrid vehicles (HV), and electric vehicles (EV). The development of SiC substrate materials is key to the advancement of SiC power semiconductors. Since 2009, our research team has been collaborating with Jiuding Construction Group Co., Ltd., and we have successfully developed 2-3 inch 4H-SiC and 6H-SiC wafers, which meet commercial standards in all technical indicators. Additionally, we invented a double seed crystal physical vapor transport technique that increases the number of crystals grown per furnace and lowers the unit price of SiC wafers.
Name： Gender：
Date of birth： Position：
Nationality： Address：
Mobile： Email：

All comments（0）

Position:1/0 First Previous Next Last Jump to
Similar results
Matching needs

No record

Relevant experts

Copyright: Shanghai Science & Technology Development and Exchange Center

Tel:021-24197746，021-24197802，021-24197801    Green Technology Bank (HU ICP 05032341-4)